졸업논문(포스터) Fabrication of GaN on Si hierarchical nanowire
- 최초 등록일
- 2019.11.30
- 최종 저작일
- 2019.11
- 1페이지/ MS 파워포인트
- 가격
2,000원1,800원
소개글
GaN on Si hierarchical nanowires에 대한 졸업논문(영문, 포스터)로 Vapor liquid solid 성장법으로 Metal assisted chemical etching과 함께 사용하였습니다.
졸업논문(포스터) 작성시 기본 form을 사용하여 발표에 도움이 되리라 확신합니다.
목차
1. Introduction
1) Motivation
2) Aim of work
3) Growth scheme
2. Experiments
1) MACE
2) GaN -VLS growth
3. Result And Discussion
1) Si NWs Optimization
2) GaN on Si hierarchical NWs Optimization
3) Reflection
4. Summary
본문내용
- Vertical Si nanowires of uniform length and diameter were successfully fabricated on Si(100) substrate by metal assisted chemical etching.
- ATPES increases density of Au NPs when no ATPES then low density of Au NPs were observed.
- The GaN on Si hierarchical NWs were synthesized by Au catalyzed vapor liquid solid growth.
- Hierarchical nanowires have shown much lower reflection in comparison with conventional nanowires.
참고 자료
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