기초전자회로 및 실험 - BJT 특성

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"기초전자회로 및 실험 - BJT 특성"에 대한 내용입니다.

목차

1. Purpose of Experiment
2. Method of Experiment
3. Results of Experiment
4. Contemplation of experiment
5. Conclusion

본문내용

1. Purpose of Experiment

In this experiment, we will observe the characteristic of bipolar junction transistor. We will measure the common-emitter (V_CE-I_C curve) characteristic and the common-base characteristic (V_CB-I_C curve) of an NPN and bipolar junction transistor. By doing so, we will fully understand the characteristic of BJT and extract the characteristic values of parameters in BJT.

2. Method of experiment

1) Design circuits like the figures below. In Figure 1, if we set V_1 constant, then we can maintain V_BE constant. Likewise, in Figure 2, if we adjust V_2 to appropriate value, then we can obtain constant I_E.
2) Measure the value of collector current with varying V_CE and find characteristic curve for 3 different values of V_BE.
3) Measure the value of collector current with varying V_CB and find characteristic curve for 3 different values of I_E.

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