[연세대학교 물리학과 물리학실험(A-1)] 11번 실험 결과레포트 (연세대학교 물리학과 전공필수 실험과목)
- 최초 등록일
- 2019.07.23
- 최종 저작일
- 2019.05
- 8페이지/ 한컴오피스
- 가격 5,000원
소개글
연세대학교 물리학과 전공필수 (2학년) 교과목 물리학실험(A-1) 결과레포트입니다.
1번 실험부터 11번 실험까지 모두 A+ 받은 레포트들입니다.
이론, 실험 과정, 실험 데이터, 실험 사진, 결과 분석이 모두 포함되어 있습니다.
예비레포트 내용은 본 결과레포트에 모두 포함되어 있습니다.
목차
1. Experiments & Goals
2. Theories
3. Experimental Processes
4. Experimental Results & Analysis
5. Discussion
6. Reference
본문내용
1. Experiments & Goals
In this experiment, we will see the MOSFET’s enormous DC input resistance, but also the large input capacitance that makes it hard to switch fast. Then the remainder of the lab is given to trying applications for the so-called analog switch or transmission gate: a switch that can pass a signal in either direction, doing a good job of approximating a mechanical switch, or more precisely, the electromechanical switch called a relay.
2. Theories
1) Structure of MOSFET
In order to arrive at the structure of the MOSFET, we begin with a simple geometry consisting of a conductive (e.g., metal) plate, an insulator (“dielectric”), and a doped piece of silicon.
Equation Q = CV suggests that, to achieve a strong control of Q by V, the value of C must be maximized, for example, by reducing the thickness of the dielectric layer separating the two plates. The ability of silicon fabrication technology to produce extremely thin but uniform dielectric layers (with thicknesses below 20 today) has proven essential to the rapid advancement of microelectronic devices.
참고 자료
R. Dorf and J. Svoboda, Introduction to Electric Circuits, 9th Edition
P. Horowitz, The Art of Electronics, 3rd Edition