단일 원소 금속의 영역 선택적 원자층 증착법 연구 동향

서지정보

ㆍ발행기관 : 한국분말야금학회 ㆍ수록지정보 : 한국분말야금학회지 / 30권 / 2호
ㆍ저자명 : 조민규, 고재희, 최병준

목차

Abstract
1. 서 론
2. 표면 활성화를 통한 ASALD
2.1. 기판의 선택성에 따른 핵 생성
2.2. 기존 방법의 한계 및 해결 방법
2.3. 표면 활성화를 통한 금속의 ASALD
3. 표면 비활성화를 통한 ASALD
3.1. 자가 정렬 단분자층
3.2. 저분자 억제제
3.3. 표면 비활성화를 통한 금속의 ASALD
4. ASALD 응용 분야
5. 결론 및 전망
References

영어 초록

The semiconductor industry faces physical limitations due to its top-down manufacturing processes. High cost of EUV equipment, time loss during tens or hundreds of photolithography steps, overlay, etch process errors, and contamination issues owing to photolithography still exist and may become more serious with the miniaturization of semiconductor devices. Therefore, a bottom-up approach is required to overcome these issues. The key technology that enables bottom-up semiconductor manufacturing is area-selective atomic layer deposition (ASALD). Here, various ASALD processes for elemental metals, such as Co, Cu, Ir, Ni, Pt, and Ru, are reviewed. Surface treatments using chemical species, such as self-assembled monolayers and small-molecule inhibitors, to control the hydrophilicity of the surface have been introduced. Finally, we discuss the future applications of metal ASALD processes.

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