Advances in atomic layer deposited high‑κ inorganic materials for gate dielectrics engineering of two‑dimensional MoS2 field effect transistors

서지정보

ㆍ발행기관 : 한국탄소학회 ㆍ수록지정보 : Carbon letters / 32권 / 5호
ㆍ저자명 : Ling Zhang, Houying Xing, Meiqing Yang, Qizhi Dong, Huimin Li, Song Liu

목차

Abstract
1 Introduction
2 Basics of MoS2 FETs
2.1 Properties of MoS2
2.2 Working principle of MoS2 FETs
2.3 Advances in MoS2 FETs
3 Basics of high-κ gate dielectrics
4 Advances in ALD process of high-κ gate dielectrics for MoS2 FETs
4.1 Back gate dielectric for MoS2 FETs
4.2 Top gate dielectric for MoS2 FETs
5 Optimization approaches for ALD process of high-κ gate dielectrics on MoS2
5.1 UVO3
5.2 Plasma-enhanced ALD (PEALD)
5.3 Annealing
5.4 The buffer layer
5.5 Metal doping
5.6 The replacement of oxidants
6 Conclusions and outlook
Acknowledgements
References

영어 초록

Molybdenum disulfide ( MoS2) has been one of the most promising members of transition-metal dichalcogenides materials. Attributed to the excellent electrical performance and special physical properties, MoS2 has been broadly applied in semiconductor devices, such as field effect transistors (FETs). At present, the exploration of further improving the performance of MoS2- based FETs (such as increasing the carrier mobility and scaling) has encountered a bottleneck, and the application of high-κ gate dielectrics has become an effective approach to change this situation. Atomic layer deposition (ALD) enables high-quality integration of MoS2 and high-κ gate dielectrics at the atomic level. In this review, we summarize recent advances in the fabrication of two-dimensional MoS2 FETs using ALD high-κ materials as gate dielectrics. We first briefly discuss the research background of MoS2 FETs. Second, we expound the electrical and other essential properties of high-κ gate dielectrics, which are essential to the performance of MoS2 FETs. Finally, we focus on the advances in fabricating MoS2 FETs with ALD high-κ gate dielectrics on MoS2, as well as the optimized ALD processes. In addition, we also look forward to the development prospect of this field.

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