Low Temperature Annealing Effect of PFO-Poss Emission Layer on the Properties of Polymer Light Emitting Diodes
(주)코리아스칼라
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- 2016.04.02
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- 2009.06
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서지정보
ㆍ발행기관 : 한국재료학회
ㆍ수록지정보 : 한국재료학회지 / 19권 / 6호
ㆍ저자명 : Gong, Su-Cheol, Chang, Ho-Jung
영어 초록
Polymer Light Emitting Diodes (PLEDs) with an ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The annealing effects of the PFO-poss film when it acts as the emission layer were investigated by using electrical and optical property measurements. The annealing conditions of the PFO-poss emission film were 100 and 200˚C for 1, 2 and 3 hours, respectively. The luminance increased and the turn-on voltage decreased when the annealing temperature and treatment time increased. After examining the Luminance-Voltage (L-V) properties of the PLED, the maximum luminance was found to be 1497 cd/m2 at 11 V for the device when it was annealed at 200˚C for 3 hours. The peak intensity of the PLED emission spectra at approximately 525 nm in wavelength increased when the annealing temperature and time of the PFO-poss film increased. These results suggest that the light emission color shifted from blue to green.
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