일반적으로 TFT(thin film transistor)의 유전체막으로 실리콘 질화막(Si3N4)이나 실리콘 산화막(SiO2)을 200-300˚C의 온도에서 증착을 하게 되는데 본 연구에서는 비정질 실리콘과 유전체막 사이의 계면 특성 특히 계면의 거칠기를 향상시키기 위..
A ZrO2 coating solution containing ZrO2 photo-catalysis, which is transparent in visible light, was prepared by the hydrolysis of alkoxide, and thin ..
Indium Gallium Zinc Oxide (IGZO) thin films were deposited onto 300 nm-thick oxidized Si substrates and glass substrates by direct current (DC) magne..
ZnO wire-like thin films were synthesized through thermal oxidation of sputtered Zn metal films in dry air. Their nanostructure was confirmed by SEM,..
CuInSe2 (CIS) thin films were electrodeposited on Mo-coated glass substrates in acidic solutionscontaining Cu2+, In3+, and Se4+ ions, depending on de..
We investigated the carbon monoxide (CO) gas-sensing properties of nanostructured Al-doped zinc oxide thin films deposited on self-assembled Au nanod..
ZnO thin films were prepared on a glass substrate by radio frequency (RF) magnetron sputtering without intentional substrate heating and then surface..