TaCl5-C3H6-H2 계에서 TaC CVD 공정의 열역학 해석

서지정보

ㆍ발행기관 : 한국재료학회 ㆍ수록지정보 : 한국재료학회지 / 28권 / 2호
ㆍ저자명 : 김현미, 최균, 심광보, 조남춘, 박종규

목차

Abstract
1. 서 론
2. 실험 방법
2.1 열역학 계산
2.2 증착 공정
3. 결과 및 고찰
3.1 TaCl5-C3H6-H2 계와 TaCl5-CH4-H2 계에서 상평형도
3.2 수소의 영향
3.3 TaC의 증착
4. 결 론
Acknowlegement
References

영어 초록

An ultra-high temperature ceramic, tantalum carbide, has received much attention for its favorable characteristics: a superior melting point and chemical compatibility with carbon and other carbides. One drawback is the high temperature erosion of carbon/carbon (C/C) composites. To address this drawback, we deposited TaC on C/C with silicon carbide as an intermediate layer. Prior to the TaC deposition, the TaCl5-C3H6-H2 system was thermodynamically analyzed with FactSage 6.2 and compared with the TaCl5-CH4-H2 system. The results confirmed that the TaCl5-C3H6-H2 system had a more realistic cost and deposition efficiency than TaCl5-CH4-H2. A dense and uniform TaC layer was successfully deposited under conditions of Ta/C = 0.5, 1200 oC and 100 torr. This study verified that the thermodynamic analysis is appropriate as a guide and prerequisite for carbide deposition.

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