Zn-Sn-O 박막 트랜지스터의 전기적 특성에 대한 전자빔 조사의 영향

서지정보

ㆍ발행기관 : 한국재료학회 ㆍ수록지정보 : 한국재료학회지 / 27권 / 4호
ㆍ저자명 : 조인환, 조경일, 최준혁, 박해웅, 김찬중, 전병혁

목차

1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
Acknowledgement
References

영어 초록

The effect of electron beam (EB) irradiation on the electrical properties of Zn-Sn-O (ZTO) thin films fabricated using a sol-gel process was investigated. As the EB dose increased, the saturation mobility of ZTO thin film transistors (TFTs) was found to slightly decrease, and the subthreshold swing and on/off ratio degenerated. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies (VO) increased from 10.35 to 12.56 % as the EB dose increased from 0 to 7.5 × 1016 electrons/cm2. Also, spectroscopic ellipsometry analysis showed that the optical band gap varied from 3.53 to 3.96 eV with increasing EB dose. From the results of the electrical property and XPS analyses of the ZTO TFTs, it was found that the electrical characteristic of the ZTO thin films changed from semiconductor to conductor with increasing EB dose. It is thought that the electrical property change is due to the formation of defect sites like oxygen vacancies.

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