나노임프린트 리소그래피 기술을 이용한 그래핀 나노리본 트랜지스터 제조 및 그래핀 전극을 활용한 실리콘 트랜지스터 응용
(주)코리아스칼라
- 최초 등록일
- 2023.04.05
- 최종 저작일
- 2016.11
- 9페이지/ 어도비 PDF
- 가격 4,000원
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서지정보
ㆍ발행기관 : 한국재료학회
ㆍ수록지정보 : 한국재료학회지 / 26권 / 11호
ㆍ저자명 : 엄성운, 강석희, 홍석원
영어 초록
Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped Si/SiO2 substrate. Consequently, we observed an enhancement of the performance of the GNRtransistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.
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