결정질 실리콘 태양전지 적용을 위한 ALD-Al2O3 패시베이션 막의 산화질화막 적층 특성
(주)코리아스칼라
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- 2016.04.02
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- 2015.05
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서지정보
ㆍ발행기관 : 한국재료학회
ㆍ수록지정보 : 한국재료학회지 / 25권 / 5호
ㆍ저자명 : 조국현, 조영준, 장효식
목차
Abstract
1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
Acknowledgement
References
영어 초록
Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) Al2O3. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect Al2O3 passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD Al2O3 film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. Al2O3/SiON stacks coated at 400 oC showed higher lifetime values in the as-stacked state. In contrast, a high quality Al2O3/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of 200 oC after the firing process. The best lifetime was achieved with stack films fired at 850 oC. These results demonstrated the potential of the Al2O3/SiON passivated layer for crystalline silicon solar cells.
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