Two‑dimensional materials based on negative differential transconductance and negative differential resistance for the application of multi‑valued logic circuit: a review
(주)코리아스칼라
- 최초 등록일
- 2023.05.22
- 최종 저작일
- 2023.02
- 18페이지/ 어도비 PDF
- 가격 5,200원
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서지정보
ㆍ발행기관 : 한국탄소학회
ㆍ수록지정보 : Carbon letters / 33권 / 1호
ㆍ저자명 : Balaji Murugan, Sang Yeol Lee
목차
Abstract
1 Introduction
2 Basics of multi-valued logic (MVL)
3 Recent developments of MVL with 2D materials
3.1 Negative differential resistance (NDR) and negative differential transconductance (NDT)
3.2 Emerging structures with 2D materials
4 Conclusion and perspective
Acknowledgements
References
영어 초록
Devices with negative differential transconductance (NDT) and negative differential resistance (NDR) have shown a strong potential for digital electronics with high information density due to their N-shaped current–voltage (I–V) characteristics leading to multiple threshold voltages ( Vths). The 2D materials, such as graphene, hBN, MoS2, WS2, etc., offer an attractive platform to achieve NDT and NDR because of the absence of dangling bonds on the surface, leading to a high-quality interface between the layers. The 2D materials' unique property of the weak van der Waals (vdW) interactions without dangling bonds on the heterostructure devices shows the way for the applications more than-Moore devices. This review holds a well-timed overview of 2D materials-based devices to develop future multi-valued logic (MVL) circuits exhibiting high information density. Notably, the recent advances in emerging 2D materials are reviewed to support the directions for future research on MVL applications.
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