SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method usingtrimethoxysilane ... manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection.SiOC
No defect including cracks appeared in the SiOC film. ... The thicknesses of the SiOC coating films were 2.36μm and 3.16μm. ... The hardness of the SiOC film was found to be 3.2Gpa through nanoindentor measurement.
The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. ... SiOC(-H) thin films were deposited on Si(100)/SiO2/Ti/Pt substrates by plasma-enhanced chemical vapor ... The dielectric constant decreased as the CH4 concentration of low-k SiOC(-H) thin film increased.
To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass ... Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. ... SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy.
SiOC 증착후 또 SiCN/SiOC 를 증착한다. ... 다시 설명하자면, SiOC를 모두 Etch후, SiCN Etch하고 다시 SiOC를 etch 하면 한번에 SiOC etch하는 것보다 micro loading이 적게 일어난다는 것이다 ... 이번에는 두번째 SiOC까지만 etch한다. PR strip 후 Cleaning까지 마친다. 6. M1위의 Nitride 박막 제거한다.
contact on SiOC with low polarity. ... prepared on SiOC with various polarities as a gate insulator. ... These contact characteristics depended on the polarities of SiOC gate insulators.