HEMT(High Electron Mobility Transistor)의 기본 원리

소개글

최근 활발히 연구되고 있는 GaN HEMT의 기본 원리에 대한 내용입니다.

목차

1. What’s HEMT?
2. 2DEG
3. Polarization
4. Contacts
5. Summary

본문내용

1. What’s HEMT?
- High electron mobility with heterojunction structure
(Prevent Coulomb scattering with no doping materials)
- High thermal stability
- High Breakdown voltage
2. 2DEG
- Discontinuity through the conduction band of the two semiconductors determines a charge transfer,
creating a triangular potential.
3. Polarization
- AlGaN/GaN HEMTs transistor don’t need doping to obtain a high electron density.
4. Contacts
- Source / Drain : Ohmic contact, Carrier could move free Metal ↔ Semiconductor.
- Gate : Schottky contact, controlled transistor to turn on / off.
5. Summary

참고 자료

위키피디아 http://en.wikipedia.org/wiki/High_electron_mobility_transistor
기타 various 학술 자료