아크 방전법으로 성장된 대면적 단일벽 탄소나노튜브 필름
(주)코리아스칼라
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- 2016.04.02
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- 2008.05
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서지정보
ㆍ발행기관 : 한국재료학회
ㆍ수록지정보 : 한국재료학회지 / 18권 / 5호
ㆍ저자명 : 강영진, 오동훈, 송혜진, 정진연, 정혁, 조유석, 김도진
영어 초록
A simple method to deposit carbon nanotube films uniformly on large area substrates using an arc discharge method is reported in this paper. The arc discharge method was modified to deposit carbon nanotube films in situ on the substrates. The substrates were scanned several times over the arcing point for a uniform film thickness. Deposition was carried out under variable dc bias conditions at 600 torr of H2 gas. The thickness uniformity of the single-wall carbon nanotube films as characterized by a four-point probe was within 30% deviation. The morphology and crystal quality of the single-wall carbon nanotube film were also characterized by field emission scanning electron microscopy and Raman spectroscopy.
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