DRAM과 Flash memory에 관련하여 영어로 정리하였습니다.

소개글

DRAM과 Flash memory에 관련하여....
형태와 동작원리, 향후방향 등에 관련하여 정리하였습니다.

목차

1. Introduction
- Static Random Access Memory (SRAM)
- The Dynamic Random Access Memory (DRAM)
- The non-volatile Flash Memory cell

2. DRAM
- The structure of DRAM
- Principle of operation of DRAM
- Next DRAM cells

3. Flash Memory
- The structure of Flash Memory
- Principle of operation of Flash Memory
- Two important effects : hot carrier effects & Fowler-Nordheim tunneling

4. Reference

본문내용

There are three of the most important types of semiconductor memory cells : the Static Random Access Memory (SRAM), the Dynamic Random Access Memory (DRAM), and the non-volatile Flash Memory cell. Especially, I am going to describe DRAM and Flash memory.
There are some differences among them. SRAMs and DRAMs are volatile in the sense that the information is lost if the power supply is removed. However, for flash memories, information is stored indefinitely. For SRAMs, the information is static. It means that as long as the power supply is on, the information is retained. On the other hand, the information stored in the cells of a DRAM must periodically be refreshed because stored charge representing one of the logic states leaks away charge to degrade.

참고 자료

▪ BEN G.STREETMAN. SOLID STATE ELECTRONIC DEVICES. : Prentice-Hall, 2000

▪ Wai-Kai Chen. MEMORY, MICROPROCESSOR, and ASIC. : CRC, 2003

▪ Betty Lise Anderson, Richard L. Anderson. Fundamentals of Semiconductor Devices. :
Mc Graw Hill, 2005

▪ Gary S. May, Simon M. Sze, Fundamentals of Semiconductor Fabrication : WILEY, 2004