전기적 에이징에 따른 유기 박막 트랜지스터의 특성에 관한 연구

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전기적 에이징에 따른 유기 박막 트랜지스터의 특성에 관한 연구

목차

국문요약
그림차례
표차례

제1장 서론···································································1

제2장 관계 이론························································4
2.1 공액성 고분자······················································4
2.1.1 고분자의 정의·····················································4
2.1.2 공액성 고분자·····················································4
2.1.3 공액성 고분자의 특성···········································5
2.2 박막 트랜지스터···················································9
2.2.1 박막 트랜지스터··················································9
2.2.2 박막 트랜지스터의 구조······································10
2.2.3 박막 트랜지스터의 동작 원리······························12
2.3 유기 박막 트랜지스터·········································16
2.3.1 유기 반도체 재료···············································16
2.3.2 유기 박막 트랜지스터·········································18
2.3.3 유기 박막 트랜지스터의 동작 원리·······················19
2.3.4 유기 박막 트랜지스터의 전기적 특성····················21

제3장 박막 형성 공정 및 분석법······················25
3.1 박막 형성 공정···················································25
3.1.1 진공·································································25
3.1.2 열 증착 공정·····················································25
3.1.3 스핀코팅 공정···················································27
3.2 분석법·································································29
3.2.1 표면 단자 측정법 (α-step)·································29
3.2.2 원자 현미경 (AFM)············································30
3.2.3 자외선 및 가시광선 분광 광도법··························32
3.2.4 핵자기 공명 분석법(NMR)···································33

제4장 실험 방법······················································34
4.1 기판 세척 공정···················································34
4.2 게이트 전극의 형성············································34
4.3 게이트 절연층의 형성·········································35
4.4 활성층 형성························································35
4.5 Source/Drain 전극 형성····································36

제5장 실험 결과 및 고찰·····································37
5.1 Bias Aging에 따른 MIM 특성 분석··················37
5.2 Bias Aging에 따른 유기 박막 트랜지스터
소자 특성 분석···················································38

제6장 결론·································································45

참고 문헌····································································46

본문내용

제1장 서 론
최근 반도체 성질을 가지는 유기물의 개발에 대한 관심이 집중되고 있으며 이를 이용한 다양한 응용 연구가 활발히 진행되고 있다. 유기물을 이용하여 소자를 제작할 경우 상온, 혹은 최소한 100℃ 이하의 저온에서의 공정이 가능하기 때문에 스핀코팅이나 진공증착 등, 단일공정으로 소자를 제작할 수 있어 제작 공정이 간단하고 비용이 저렴하며, 유연성이 있어 플라스틱 기판의 사용이 가능하므로 충격에 의해 깨지지 않고 구부리거나 접을 수 있는 전자회로 기판이 미래의 산업에 필수적인 요소가 될 것으로 예상되고 있으며 이러한 요구를 충족시킬 수 있는 유기물을 이용한 소자의 개발은 아주 중요한 연구 분야로 대두되고 있다. 레이저 다이오드, 태양전지, 캐리어 이동도가 높은 것으로 알려진 공액성 고분자와 공액성 소중합체를 이용한 전계효과 트랜지스터와 유기물에서의 전계발광을 이용한 유기 EL 등의 소자 개발에 관심이 집중되고 있다. 특히 유기 EL 분야는 상품화 단계까지 이르고 있어 유기물을 이용한 응용 소자개발에 대한 연구를 활발히 진행시키는데 중요한 역할을 담당하고 있다. 현재 디스플레이 시장에서 최고의 위치에 자리 잡고 있는 액정 디스플레이를 능동 구동하기 위해 박막 트랜지스터를 사용한 TFT-LCD 의 경우를 볼 때 유기 EL을 능동구동하기 위한 것 또한 필수적이며, 능동구동 소자에 유기 TFT를 이용하려는 연구도 활발히 진행 중에 있다. 이러한 발전은 초대형 벽걸이 디스플레이에서 두루마리 TV에 이르기까지 광범위한 범위에서 진행 될 것으로 보인다.

참고 자료

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